Part Number Hot Search : 
C68HC11 JANTXV1 1N4903 82PR20LF 112S6TF 00102 9923AB H224J
Product Description
Full Text Search
 

To Download MBR10100C Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  data sheet high voltage power schottky rectifier MBR10100C apr. 2009 rev. 1. 1 bcd semiconductor manufacturing limited 1 general description high voltage dual schottky rectifier suited for switch mode power supplies and other power converters. this device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. the MBR10100C is available in standard to-220f-3, to-220-3 and to-220-3 (2) packages. features ? high surge capacity ? 150 c operating junction temperature ? 10a total (5a per diode leg) ? guard-ring foe stress protection ? pb- free packages are available main product characteristics i f(av) 2*5a v rrm 100v t j 150 c v f(max) 0.75v mechanical characteristics ? case: epoxy, molded ? epoxy meets ul 94 v-0@ 0.125 in ? weight (approximately): 1.9 grams (to-220-3, to-220-3(2) and to-220f-3) ? finish: all extern al surfaces corrosion resistant and terminal ? leads are readily solderable ? lead temperature fo r soldering purposes: 260 c max. for 10 seconds applications ? power supply ? output rectification ? power management ? instrumentation figure 1. package type of MBR10100C to-220f-3 to-220-3 to-220-3 (2)
data sheet high voltage power schottky rectifier MBR10100C apr. 2009 rev. 1. 1 bcd semiconductor manufacturing limited 2 pin configuration t package (to-220-3) (to-220-3 (2)) tf package (to-220f-3) figure 2. pin configuration of MBR10100C (top view) figure 3. internal structure of MBR10100C
data sheet high voltage power schottky rectifier MBR10100C apr. 2009 rev. 1. 1 bcd semiconductor manufacturing limited 3 ordering information MBR10100C - circuit type e1: lead free g1: green package t: to-220-3/to-220-3 (2) blank: tube tf: to-220f-3 part number marking id package lead free green lead free green packing type to-220-3/ to-220-3 (2) MBR10100Ct-e1 MBR10100Ct- g1 MBR10100Ct-e1 MBR10100Ct- g1 tube to-220f-3 MBR10100Ctf-e 1 MBR10100Ctf -g1 MBR10100Ctf-e1 MBR10100Ctf -g1 tube bcd semiconductor's pb-free products, as designated with "e1" suffix in the part number, are rohs compliant. products with ?g1? suffix are available in green packages. absolute maximum ratings ( per diode leg) (note 1) note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. note 2: the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/ ja . parameter symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 v average rectified forward current (rated v r ) t c = 138 c i f(av) 5 a peak repetitive forward current (rated v r , square wave, 20 khz) t c = 13 8 c i frm 10 a non repetitive peak surge current (surge applied at rated load conditions half wave, single phase, 60hz) i fsm 100 a operating junction temperature range note 2 t j 150 c storage temperature range t stg -55 to 150 c voltage rate of change (rated v r ) dv/dt 10000 v/ s esd ratings: machine model = c human body model =3b > 400 > 8000 v
data sheet high voltage power schottky rectifier MBR10100C apr. 2009 rev. 1. 1 bcd semiconductor manufacturing limited 4 recommended operating conditions parameter symbol condition value unit to-220-3/ to-220-3 (2) 3.0 jc junction to case to-220f-3 4.5 to-220-3/ to-220-3 (2) 60 maximum thermal resistance ja junction to ambient to-220f-3 60 c/w electrical characteristics parameter symbol conditions value units i f =5a, t c =25 c 0.85 i f =5a, t c =125 c 0.75 i f =10 a, t c =25 c 0.95 maximum instantaneous forward voltage drop (note 3) v f i f =10a, t c =125 c 0.85 v rated dc voltage, t c =125 c 6.0 maximum instantaneous reverse current (note 3) i r rated dc voltage, t c =25 c 0.1 ma note 3: pulse test: pulse width = 300 s, duty cycle ? 2.0%.
data sheet high voltage power schottky rectifier MBR10100C apr. 2009 rev. 1. 1 bcd semiconductor manufacturing limited 5 typical performance characteristics figure 4. typical forward voltage per diode figure 5. typical reverse current per diode figure6. average forward current vs. case temperature (per diode) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.01 0.1 1 10 100 t j =150 0 c t j =125 0 c instantaneous forward current(a) instantaneous forward voltage(v) t j =25c 0 20406080100 1e-3 0.01 0.1 1 10 100 1000 10000 t j =150 0 c t j =125 0 c instantaneous reverse current( a) percent of rated peak reverse voltage(%) t j =25 0 c 0 1 2 3 4 5 6 7 8 9 10 100 105 110 115 120 125 130 135 140 145 150 155 case temperature ( c) average forward current (amps)
data sheet high voltage power schottky rectifier MBR10100C apr. 2009 rev. 1. 1 bcd semiconductor manufacturing limited 6 mechanical dimensions to-220-3 unit: mm(inch) 3.560(0.140) 1.160(0.046) 0.813(0.032) 8 . 7 6 3 ( 0 . 3 4 5 ) 2.540(0.100) 0.356(0.014) 2.080(0.082) 3 7 3.560(0.140) 7 9.660(0.380) 0.550(0.022) 60 0.381(0.015) 2 . 5 8 0 ( 0 . 1 0 2 ) 6 0 1.500(0.059) 0.200(0.008) 2.540(0.100) 0.381(0.015) 0.406(0.016) 3 . 3 8 0 ( 0 . 1 3 3 ) 10.660(0.420) 4.060(0.160) 1.350(0.053) 4.820(0.190) 2.880(0.113) 1.760(0.069)
data sheet high voltage power schottky rectifier MBR10100C apr. 2009 rev. 1. 1 bcd semiconductor manufacturing limited 7 mechanical dimensions (continued) to-220-3(2) unit: mm(inch) 3 3 1.300(0.051) 3 9.800(0.386) 10.200(0.402) 3.560(0.140) 3.640(0.143) 0.700(0.028) 0.900(0.035) 1.270(0.050) 2.540(0.100) 2.540(0.100) 1.300(0.051) 0.600(0.024) 1.700(0.067) 4.500(0.177) 2.400(0.094) 0.400(0.016) 0.600(0.024) ?
data sheet high voltage power schottky rectifier MBR10100C apr. 2009 rev. 1. 1 bcd semiconductor manufacturing limited 8 mechanical dimensions (continued) to-220f-3 unit: mm(inch) 4.300(0.169) 0.450(0.018) 0.600(0.024) 2.540(0.100) 9.700(0.382) 10.300(0.406) 6.900(0.272) 7.100(0.280) 3.000(0.119) 3.400(0.134) 14.700(0.579) 16.000(0.630) 1.000(0.039) 1.400(0.055) 1.100(0.043) 1.500(0.059) 2.790(0.110) 4.500(0.177) 12.500(0.492) 13.500(0.531) 0.550(0.022) 0.900(0.035) 2.540(0.100) 3.000(0.119) 3.550(0.140) 3.370(0.133) 3.900(0.154) 2.350(0.093) 2.900(0.114) 4.900(0.075)


▲Up To Search▲   

 
Price & Availability of MBR10100C

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X